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MTSF3N03HD Datasheet(数据表) 1 Page - Motorola, Inc
来自 : html.alldatasheetcn.com/html-p 发布时间:2021-03-24
\"Zoomzoom in\"Zoomzoom out 1 page\"background1Motorola TMOS Power MOSFET Transistor Device DataDesigner\'s™ Data SheetMedium Power Surface Mount ProductsTMOS Single N-ChannelField Effect TransistorMicro8™ devices are an advanced series of power MOSFETswhich utilize Motorola’s High Cell Density HDTMOS process toachieve lowest possible on–resistance per silicon area. They arecapable of withstanding high energy in the avalanche and commuta-tion modes and the drain–to–source diode has a very low reverserecovery time. Micro8™ devices are designed for use in low voltage,high speed switching applications where power efficiency is important.Typical applications are dc–dc converters, and power management inportable and battery powered products such as computers, printers,cellular and cordless phones. They can also be used for low voltagemotor controls in mass storage products such as disk drives and tapedrives. The avalanche energy is specified to eliminate the guessworkin designs where inductive loads are switched and offer additionalsafety margin against unexpected voltage transients.• Miniature Micro8 Surface Mount Package — Saves Board Space• Extremely Low Profile ( 1.1 mm) for thin applications such asPCMCIA cards• Ultra Low RDS(on) Provides Higher Efficiency and ExtendsBattery Life• Logic Level Gate Drive — Can Be Driven by Logic ICs• Diode Is Characterized for Use In Bridge Circuits• Diode Exhibits High Speed, With Soft Recovery• IDSS Specified at Elevated Temperature• Avalanche Energy Specified• Mounting Information for Micro8 Package ProvidedDEVICE MARKINGORDERING INFORMATIONAADeviceReel SizeTape WidthQuantityAAMTSF3N03HDR213″12 mm embossed tape4000 unitsDesigner’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limitcurves — representing boundaries on device characteristics — are given to facilitate “worst case” design.Preferred devices are Motorola recommended choices for future use and best overall value.HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of InternationalRectifier. Thermal Clad is a trademark of the Bergquist Company.MOTOROLASEMICONDUCTOR TECHNICAL DATAOrder this documentby MTSF3N03HD/D© Motorola, Inc. 1997™MTSF3N03HDSINGLE TMOSPOWER MOSFET3.8 AMPERES30 VOLTSRDS(on) = 0.040 OHMCASE 846A–02, Style 1Micro8Motorola Preferred DeviceDSGSourceSourceSourceGate12348765Top ViewDrainDrainDrainDrainREV 3

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发布于 : 2021-03-24 阅读(0)